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XN01509|XN1509 PDF预览

XN01509|XN1509

更新时间: 2024-09-29 23:33:19
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 64K
描述
Composite Device - Composite Transistors

XN01509|XN1509 数据手册

 浏览型号XN01509|XN1509的Datasheet PDF文件第2页浏览型号XN01509|XN1509的Datasheet PDF文件第3页 
Composite Transistors  
XN01531 (XN1531)  
Silicon NPN epitaxial planer transistor  
Unit: mm  
For high frequency, oscillation and mixing  
2.8+0.2  
1.5+0.25  
-
0.3  
0.65 0.15  
-
0.05  
0.65 0.15  
5
1
2
Features  
I
G
Two elements incorporated into one package.  
(Emitter-coupled transistors)  
Reduction of the mounting area and assembly cost by one half.  
4
3
G
Basic Part Number of Element  
2SC3130 × 2 elements  
I
G
0.1 to 0.3  
0.4 0.2  
Absolute Maximum Ratings (Ta=25˚C)  
1 : Collector (Tr1)  
2 : Collector (Tr2)  
3 : Base (Tr2)  
4 : Emitter  
5 : Base (Tr1)  
EIAJ : SC–74A  
Mini Type Pakage (5–pin)  
I
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Total power dissipation  
15  
Rating  
10  
V
Marking Symbol: 9F  
Internal Connection  
of  
3
50  
V
element  
mA  
mW  
˚C  
PT  
200  
Tr1  
5
1
2
Overall Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
–55 to +150  
˚C  
4
3
Tr2  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
VCEO  
Conditions  
min  
10  
3
typ  
max  
Unit  
V
Collector to emitter voltage  
Emitter to base voltage  
IC = 2mA, IB = 0  
VEBO  
ICBO  
ICEO  
hFE  
IE = 10µA, IC = 0  
VCB = 10V, IE = 0  
VCE = 10V, IB = 0  
VCE = 4V, IC = 5mA  
V
1
µA  
µA  
Collector cutoff current  
10  
Forward current transfer ratio  
75  
200  
400  
Forward current transfer hFE ratio  
hFE (small/large)*1 VCE = 4V, IC = 5mA  
0.5  
0.99  
VCE = 4V, IC = 100µA  
hFE2/hFE1  
hFE2/hFE1 ratio  
0.75  
1.6  
VCE = 4V, IC = 5mA  
Collector to emitter saturation voltage VCE(sat)  
IC = 20mA, IB = 4mA  
0.5  
1.1  
V
pF  
Collector output capacitance  
Transition frequency  
Cob  
VCB = 4V, IE = 0, f = 1MHz  
VCB = 4V, IE = –5mA, f = 200MHz  
VCB = 4V, IE = –5mA, f = 30MHz  
VCB = 4V, IE = 0, f = 1MHz  
0.9  
1.9  
fT  
1.4  
2.5  
GHz  
ps  
Collector to base parameter  
rbb'·CC  
11.8  
0.25  
13.5  
0.35  
Common base reverse transfer capacitance Crb  
pF  
*1 Ratio between 2 elements  
Note.) The Part number in the Parenthesis shows conventional part number.  
1

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